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STP40N03L-20
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STP40N03L-20
s s s s s s s
V DSS 30 V
R DS(on) < 0.02
ID 40 A
TYPICAL RDS(on) = 0.016 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (*) Ptot dV/dt(1) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o
Value 30 30 15 40 28 160 90 0.6 6 -65 to 175 175
Unit V V V A A A W W/ o C V/ns
o o
C C
(*) Pulse width limited by safe operating area
March 1996
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STP40N03L-20
THERMAL DATA
R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.66 62.5 0.5 300
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol I AR E AS EAR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Max Value 40 300 75 28 Unit A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 30 250 1000 100 Typ. Max. Unit V A A nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = 15 V
T c = 125 o C
ON ()
Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance Test Conditions ID = 250 A T c = 100o C 0.019 40 Min. 1 Typ. 1.6 0.016 Max. 2 0.02 0.04 0.023 Unit V A
V GS = 10V I D = 20 A V GS = 10V I D = 20 A V GS = 5V I D = 20 A
ID(on)
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 20 A V GS = 0 Min. 15 Typ. 22 1800 450 180 2300 580 230 Max. Unit S pF pF pF
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STP40N03L-20
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 15 V I D = 10 A R G = 4.7 V GS = 5 V (see test circuit, figure 3) V DD = 24 V I D = 20 A R G = 50 V GS = 5 V (see test circuit, figure 5) V DD = 24 V I D = 20 A V GS = 5 V Min. Typ. 20 80 200 Max. 30 100 Unit ns ns A/s
Qg Q gs Q gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
40 10 20
60
nC nC nC
SWITCHING OFF
Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 24 V I D = 20 A R G = 4.7 V GS = 5 V (see test circuit, figure 5) Min. Typ. 42 45 76 Max. 55 60 100 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 40 A V GS = 0 65 0.12 4 I SD = 20 A di/dt = 100 A/s V DD = 24 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 40 160 1.5 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area (1) ISD 40 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX
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STP40N03L-20
PSPICE PARAMETERS SUBCIRCUIT COMPONENTS
Symbol S1 S2 LD LG LS RDRAIN RGATE CGD CGS ALFA RGN Parameter (V14_16<0) (See Power Mosfet Model Subcircuit) (V16_11<0) (See Power Mosfet Model Subcircuit) Drain Inductance Gate Inductance Source Inductance Drain Resistance Gate Resistance Gate Drain Capacitance Gate Source Capacitance Drift Coeficient Negative Bias Resistance Value ON ON 8 10 10 1.9E 1 3.92 1.9 1E
-3 -2
Unit
nH nH nH nF nF V -1 K
10
DIODE DRAIN GATE (Depletion Capacitance)
Symbol CJO VJ M Parameter Zero Bias p-n Capacitance p-n Potential p-n Grading Coefficient Value 2.7 0.35 0.55 Unit nF V
DIODE DRAIN SOURCE
Symbol CJO VJ M TT Parameter Zero Bias p-n Capacitance p-n Potential p-n Grading Coefficient Transit Time Value 10 0.35 0.55 20 nsec Unit nF V
N MOSFET
Symbol L W LEVEL TOX VTO U0 THETA Vmax KP Channel Length Channel Width Model Index Oxide Thickness Zero Bias Threshold Voltage Surface Mobility Mobility Modulation Maximum Drift Velocity Trans Conductance Coefficient Parameter Value 1 1 3 1 3.25 600 0.005 0 15 Meter V cm /VS V -1 Meter/sec Amp/V 2
2
Unit Meter Meter
For Transient Simulation Applicate U.I.C. (Use Initial Condition) Option
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STP40N03L-20
PSPICE NETLIST OF THE SUBCIRCUIT
.SUBCKT STP40N03L-20 1 2 3 *VALUE OF THE PACKAGE INDUCTANCES LS 1 11 10n LG 2 12 10n LD 3 13 7n *RESISTANCE OF THE GATE POLYSILICON RG 12 16 1 *EPY AND DRIFT RESISTANCES RD 13 14 1.9e-02 EDRI 14 15 POLY(2) (13 14) (13 11) 0 0 0 0 1e-3 *CAPACITANCE GATE SOURCE CGS 16 11 1.90n *OPTIONAL FOR NEGATIVE GATE BIAS *S2 51 11 11 16 SWITCH *CGN 51 16 3.92n *RGN 51 16 10k *MILLER CAPACITANCE CGD 16 17 3.92n * DEPLETION CAPACITANCE DGD 17 14 DGD S1 17 14 16 14 SWITCH .MODEL DGD D +IS= +CJO=2.6n +Vj=.1 +M=.6 .MODEL SWITCH VSWITCH +RON=1m +ROFF=1MEG +VON=0.1 * OUTPUT CAPACITANCE AND BODY DRAIN DIODE DBD 11 14 DBD .MODEL DBD D +TT=20n +CJO=7.8n +VJ=.1 +M=.6 * MODEL OF THE MOSFET MMAIN 15 16 11 11 MMAIN L=1u W=1u .MODEL MMAIN NMOS +LEVEL=3 +TOX=1 +VTO=3.25 +uo=600 +THETA=0.005 +VMAX=5e7 +KP=28 .ENDS
Power Mosfet Model Subcircuit
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STP40N03L-20
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
F1
D
G1
E
Dia. L5 L7 L6 L4
P011C
L9
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F2
F
G
H2
STP40N03L-20
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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